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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE171/D Complementary Plastic Silicon Power Transistors . . . designed for low power audio amplifier and low current, high speed switching applications. * Collector-Emitter Sustaining Voltage -- VCEO(sus) = 60 Vdc -- MJE171, MJE181 VCEO(sus) = 80 Vdc -- MJE172, MJE182 * DC Current Gain -- hFE = 30 (Min) @ IC = 0.5 Adc hFE = 12 (Min) @ IC = 1.5 Adc * Current-Gain -- Bandwidth Product -- fT = 50 MHz (Min) @ IC = 100 mAdc * Annular Construction for Low Leakages -- ICBO = 100 nA (Max) @ Rated VCB MAXIMUM RATINGS MJE171 MJE181 80 60 MJE172 MJE182 100 80 MJE171* MJE172* NPN MJE181* MJE182* *Motorola Preferred Device PNP 3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 - 80 VOLTS 12.5 WATTS PD, POWER DISSIPATION (WATTS) IIIIIIIIIIIIIIIIIIIIIII I II II I II IIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII II III I I IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIII II III I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II III I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II III I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II III III I I I I I II II IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIII III II I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII Rating Symbol VCB VCEO VEB IC IB PD PD Unit Vdc Vdc Vdc Adc Adc Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage 7.0 3.0 6.0 1.0 Collector Current -- Continuous Peak Base Current Total Power Dissipation @ TA = 25_C Derate above 25_C 1.5 0.012 12.5 0.1 Watts W/_C Watts W/_C Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range TJ, Tstg - 65 to + 150 CASE 77-08 TO-225AA _C THERMAL CHARACTERISTICS Characteristic Symbol JC JA Max 10 Unit Thermal Resistance, Junction to Case _C/W _C/W Thermal Resistance, Junction to Ambient TA TC 2.8 14 2.4 2.0 12 10 83.4 1.6 8.0 1.2 6.0 0.8 4.0 0.4 2.0 0 0 TA TC 20 40 60 80 100 120 140 160 T, TEMPERATURE (C) Figure 1. Power Derating Preferred devices are Motorola recommended choices for future use and best overall value. REV 2 (c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII MJE171 MJE172 MJE181 MJE182 (1) fT = hfe* ftest. DYNAMIC CHARACTERISTICS ON CHARACTERISTICS OFF CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Current-Gain -- Bandwidth Product (1) (IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz) Base-Emitter On Voltage (IC = 500 mAdc, VCE = 1.0 Vdc) Base-Emitter Saturation Voltage (IC = 1.5 Adc, IB = 150 mAdc) (IC = 3.0 Adc, IB = 600 mAdc) Collector-Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.5 Adc, IB = 150 mAdc) (IC = 3.0 Adc, IB = 600 mAdc) DC Current Gain (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 1.0 Vdc) (IC = 1.5 Adc, VCE = 1.0 Vdc) Emitter Cutoff Current (VBE = 7.0 Vdc, IC = 0) Collector Cutoff Current (VCB = 80 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0, TC = 150_C) (VCB = 100 Vdc, IE = 0, TC = 150_C) Collector-Emitter Sustaining Voltage (IC = 10 mAdc, IB = 0) 2 +11 V 0 tr, tf 10 ns DUTY CYCLE = 1.0% t, TIME (ns) - 9.0 V RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES. Figure 2. Switching Time Test Circuit 25 s 51 RB Characteristic -4 V D1 VCC + 30 V RC SCOPE MJE171, MJE181 MJE172, MJE182 MJE171, MJE181 MJE172, MJE182 MJE171, MJE181 MJE172, MJE182 MJE171/MJE172 MJE181/MJE182 100 500 300 200 1K 50 30 20 10 5 3 2 1 1 2 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 IC, COLLECTOR CURRENT (AMPS) Motorola Bipolar Power Transistor Device Data NPN MJE181/182 PNP MJE171/172 VCEO(sus) VCE(sat) VBE(sat) VBE(on) Symbol Figure 3. Turn-On Time ICBO IEBO Cob hFE fT td tr VCE = 30 V IC/IB = 10 VBE(off) = 4.0 V TJ = 25C Min 50 50 30 12 60 80 -- -- -- -- -- -- -- -- -- -- -- -- -- Max 250 -- -- 1.2 1.5 2.0 0.3 0.9 1.7 0.1 0.1 0.1 0.1 0.1 60 40 -- -- -- 3 5 pF -- mAdc Adc Adc MHz Unit Vdc Vdc Vdc Vdc 10 MJE171 MJE172 MJE181 MJE182 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 t, TIME (ms) 5.0 10 20 50 100 200 0.05 0.02 0.01 0 (SINGLE PULSE) D = 0.5 0.2 0.1 JC(t) = r(t) JC JC = 10C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) JC(t) P(pk) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) t1 t2 DUTY CYCLE, D = t1/t2 Figure 4. Thermal Response ACTIVE-REGION SAFE OPERATING AREA 10 IC, COLLECTOR CURRENT (AMP) 500 s dc 5.0 ms TJ = 150C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO MJE171 MJE172 2.0 3.0 5.0 10 20 30 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (AMP) 5.0 2.0 1.0 0.5 0.2 0.1 0.05 0.02 0.01 1.0 100 s 10 5.0 2.0 1.0 0.5 0.2 0.1 0.05 0.02 100 0.01 1.0 5.0 ms dc 100 s 500 s TJ = 150C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW MJE181 RATED VCEO MJE182 2.0 3.0 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. MJE171, MJE172 There are two limitations on the power handling ability of a transistor -- average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures 5 and 6 is based on T J(pk) = 150_C; TC 10K 5K 3K 2K 1K t, TIME (ns) 500 300 200 100 50 30 20 tf NPN MJE181/182 PNP MJE171/172 5 10 10 0.5 0.7 1.0 ts VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25C Figure 6. MJE181, MJE182 is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150 _C. T J(pk) may be calculated from the data in Figure 4. At high case temperature, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. t 100 70 C, CAPACITANCE (pF) 50 PNP MJE171/MJE172 NPN MJE181/MJE182 Cib TJ = 25C 30 20 Cob 10 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 23 IC, COLLECTOR CURRENT (AMPS) 2.0 3.0 5.0 7.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 30 50 Figure 7. Turn-Off Time Motorola Bipolar Power Transistor Device Data Figure 8. Capacitance 3 MJE171 MJE172 MJE181 MJE182 PACKAGE DIMENSIONS -B- U Q F M C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.055 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.39 0.64 0.88 3.69 3.93 1.02 --- -A- 123 H K V G S D 2 PL 0.25 (0.010) M J R 0.25 (0.010) A M A M M B M B M STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE CASE 77-08 TO-225AA ISSUE V Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 4 Motorola Bipolar Power Transistor Device Data *MJE171/D* MJE171/D |
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